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Recrystallized Silicon Carbide Ceramics



Recrystallized Silicon carbide ceramics

Recrystallized Silicon Carbide ceramics are produced from pure silicon carbide powders.Since no binders are added,the manufacturing process requires high sintering temperature (2300-2500 ºC).Absence of binders allows using the materials at temperatures up to (1650 ºC).Recrystallized Silicon Carbide materials have 10-15% of open porosity favoring their high thermal shock resistance.Due to their porosity mechanical strength and corrosion resistance of the materials are lower than those of dense silicon carbide ceramics.


Recrystallized Silicon carbide ceramics characteristics:

@Extremely high hardness

@Corrosion resistant

@High thermal conductivity

@Outstanding thermal shock resistance

@Chemically and thermally resistant


Recrystallized Silicon carbide ceramic shapes:

@Tubes

@Batts

@Beams

@Rollers

@Plates

@Crucibles

@Saggers

@Burner nozzles


Detailed specifications:

Index

Unit

RSiC

a-SIC

%

> 99

Bulk Density

g/cm 3

2.65-2.75

Apparent Porosity

%

15

Bending strength at 20°C

MPa

90-100

Bending strength at 1200°C

MPa

110-120

Compression Strength

MPa

600

Thermal conductivity at 1200°C

W/MK

26

Thermal Expansion at 1200°C

a×10-6/°C

4.8

Thermal Shock Resistance at 1200

 

Good

Max working Temperature

1650